BFR280T / BFR280Tw document number 85027 rev. 1.3, 29-apr-05 vishay semiconductors www.vishay.com 1 2 3 1 2 1 3 electrostatic sensitive device. observe precautions for handling. 13581 silicon npn planar rf transistor features ? low power applications ? low noise figure ? high transition frequency ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications for low noise and high gain broadband amplifiers at collector currents from 0.2 ma to 8 ma. mechanical data typ: BFR280T case: sot-23 plastic case weight: approx. 8.0 mg marking: re pinning: 1 = collector, 2 = base, 3 = emitter typ: BFR280Tw case: sot-323 plastic case weight: approx. 6.0 mg marking: wre pinning: 1 = collector, 2 = base, 3 = emitter absolute maximum ratings t amb = 25 c, unless otherwise specified maximum thermal resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu parameter test condition symbol value unit collector-base voltage v cbo 15 v collector-emitter voltage v ceo 8v emitter-base voltage v ebo 2v collector current i c 10 ma total power dissipation t amb 114 c p tot 80 mw junction temperature t j 150 c storage temperature range t stg - 65 to + 150 c parameter test condition symbol value unit junction ambient 1) r thja 450 k/w e3
www.vishay.com 2 document number 85027 rev. 1.3, 29-apr-05 BFR280T / BFR280Tw vishay semiconductors electrical dc characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol min ty p. max unit collector-emitter cut-off current v ce = 15 v, v be = 0 i ces 100 a collector-base cut-off current v cb = 10 v, i e = 0 i cbo 100 na emitter-base cut-off current v eb = 1 v, i c = 0 i ebo 1 a collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 8v collector-emitter saturation voltage i c = 5 ma, i b = 0.5 ma v cesat 0.1 0.4 v dc forward current transfer ratio v ce = 1 v, i c = 0.25 ma h fe 30 90 150 v ce = 1 v, i c = 3 ma h fe 30 100
BFR280T / BFR280Tw document number 85027 rev. 1.3, 29-apr-05 vishay semiconductors www.vishay.com 3 electrical ac characteristics t amb = 25 c, unless otherwise specified package dimensions in mm (inches) parameter test condition symbol min ty p. max unit transition frequency v ce = 1 v, i c = 3 ma, f = 500 mhz f t 5.5 ghz v ce = 5 v, i c = 6 ma, f = 500 mhz f t 7ghz collector-base capacitance v cb = 1 v, f = 1 mhz c cb 0.3 pf collector-emitter capacitance v ce = 1 v, f = 1 mhz c ce 0.15 pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb 0.3 pf noise figure v ce = 1 v, i c = 3 ma, z s = z sopt , f = 900 mhz f1.6db v ce = 5 v, i c = 3 ma, z s = z sopt , f = 1.75 ghz f2.4db power gain v ce = 1 v, i c = 3 ma, z s = 50 , z l = z lopt , f = 900 mhz g pe 13.5 db v ce = 5 v, i c = 6 ma, z s = 50 , z l = z lopt , f = 1.75 ghz g pe 12 db transducer gain v ce = 5 v, i c = 6 ma, f = 900 mhz, z 0 = 50 |s 21e | 2 13 db 2.0 (0.079) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) 0.52 (0.020) b e c 9511346 2.8 (.110) 3.1 (.122) 0.4 (.016) 0.95 (.037) 0.95 (.037) 0.1 (.004) max. 1.20(.047) 1.43 (.056) 0.4 (.016) 0.4 (.016) 0.098 (.005) 0.175 (.007) 0.95 (.037) 1.15 (.045) 2.35 (.092) 2.6 (.102) iso method e mounting pad layout
www.vishay.com 4 document number 85027 rev. 1.3, 29-apr-05 BFR280T / BFR280Tw vishay semiconductors package dimensions in mm (inches) 96 12236 0.9 (0.035) 0.39 (0.015) mounting pad layout 0.95 (0.37) 0.95 (0.037) 2.0 (0.079) 1.00 (0.039) 10 0.10 (0.004) 0.10 (0.004) 2.05 (0.080) 2.00 (0.078) 1.25 (0.049) 0.30 (0.012) 1.3 (0.051) s o m e t h o d e
BFR280T / BFR280Tw document number 85027 rev. 1.3, 29-apr-05 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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